IPP60R180P7
1、Summary of Features
Efficiency
600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G
Ease-of-use
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
2、Benefits
Efficiency
Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency
Ease-of-use
Ease-of-use in manufacturing environments by stopping ESD failures occurring
Integrated R G reduces MOSFET oscillation sensitivity
MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
Excellent ruggedness during hard commutation of the body diode seen in LLC topology
Suitable for a wide variety of end applications and output powers
Parts available suitable for consumer and industrial applications
Description
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Optimized power MOSFETs merging high energy efficiency with ease-of-use
The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
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Contact Person: Mr. Andy Luo
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ICQ: 458036258
Email:andyluo@kinglionski.com (electronic component) , andyluo@kinglionski.com (Automation Part )
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