Due to the DSP of TI 200M, it costs about 15 dollars (buy it with ku). The STM‘s F7 and H7 have higher frequency in terms of clock frequency, but they are much cheaper. So why are TI chips more expensive than STM chips?

Mainly because TI‘s breakthroughs in integration technology can bring customers the following obvious advantages:

1. It is to reduce parasitic effects: especially the parasitic inductance that limits the important factor of power density. For example, very powerful GaN power switches developed by TI have lower parasitics and can switch extremely fast. But as a standalone switch, parasitic inductance can significantly limit its performance. To this end, TI packaged a GaN switch with a gate driver in its first product, the LMG3410. This reduces the effect of parasitic inductance between the gate driver and the switch, enabling the fastest possible switching. At the same time, the device also integrates passive components, especially the input bypass capacitor, which reduces the parasitic loop inductance, which not only allows the power device to switch faster at higher frequencies with less loss, but also keeps the voltage stress of the device at lower level.

2. Ease of use: From the point of view of ease of use, integration capabilities are also very important to customer applications. For example, the TI UCC12050 integrates a reinforced isolation transformer and primary and secondary side silicon to provide a fully integrated 0.5W isolated bias power solution. This is a very easy-to-use device for users as it meets stringent EMI requirements while increasing power density by another 80%. This enables the UCC12050 to fit into fields and applications that traditional solutions cannot.

3. Use the z-dimension to improve power density: Especially for applications with limited board area, the use of z-dimension integration can reduce the overall x-y footprint. The TPSM53604 is a good example. TI has built fully integrated DC-DC power modules that are 30% smaller in size and 50% lower power than previous products. Most of these improvements are achieved using three-dimensional integrated passive devices. TI is leveraging integrated technologies across process, package and circuit design to deliver superior power density to customers and applications. TI‘s GaN devices integrate GaN FETs with high-speed gate drivers to greatly reduce parasitic inductance and overshoot, enabling engineers to achieve high-speed switching frequencies of 1MHz. Integrating passive components in an IC package not only increases power density and enables lower loop inductance, but also meets the requirements of board space-constrained applications. Now, power system designers don‘t have to wait any longer. With the help of TI, which continues to drive innovation in power density, power solutions and reference designs for a wide range of applications can reduce development time and solve increasingly pressing power efficiency issues, allowing The world is getting smarter and greener.

The above 3 points are the reason why TI‘s chips are more expensive than STM chips. In short, TI‘s chips and STM chips choose Shenzhen HaoQiCore Technology, focusing on ST and TI product solutions.