Gallium nitride (GAN) - based products can achieve higher energy efficiency, help engineers design more compact power supplies, suitable for various consumer, industrial and automotive applications.

STMicroelectronics has launched a new series - gallium nitride power semiconductor. This series of products belongs to stpower product portfolio of STMicroelectronics, which can significantly reduce the energy consumption and size of various electronic products. The target applications of this series include the built-in power supply of consumer electronic products, such as charger, external power adapter of PC, LED lighting driver, TV and other household appliances. The global output of consumer electronics products is very large. If energy efficiency is improved, carbon dioxide emissions can be significantly reduced. In higher power applications, ST‘s powergan devices are also suitable for telecom power supply, industrial drive motors, solar inverters, electric vehicles and their charging facilities.

Edoardo Merli, vice president of STMicroelectronics automotive and discrete device product department and manager of power transistor business unit, said:

The commercialization of GaN based products is the next critical stage of power semiconductors, and we are ready to release this exciting technological potential. Today, St released the first product of the new series of stpower product portfolio, bringing breakthrough performance to consumer, industrial and automotive power supplies. We will gradually expand the powergan product portfolio so that customers everywhere can design more efficient and smaller power supplies.

Refer to technical information:

Gallium nitride (GAN) is a wide band gap composite semiconductor material. Its voltage tolerance is much higher than that of traditional silicon materials, and it will not affect the on resistance performance, so it can reduce the on loss. In addition, the switching energy efficiency of Gan products is also higher than that of silicon-based transistors, so that very low switching loss can be achieved. The higher switching frequency means that the application circuit can use smaller passive components. All these advantages enable designers to reduce the total loss of power converters (reduce heat) and improve energy efficiency. Therefore, Gan can better support the lightweight of electronic products. For example, the PC power adapter using Gan transistors is smaller and lighter than the charger commonly used everywhere at present.

According to third-party estimates, after using Gan devices, standard mobile phone chargers can be slimmed down by up to 40%, or output more power under the same size conditions, and can also achieve similar performance improvements in energy efficiency and power density, which are applicable to consumer, industrial, automotive and other electronic products.

As the first product of ST‘s new g-hemt transistor product family, 650vsgt120r65al has a maximum on resistance (RDS (on)) of 120m Ω, a maximum output current of 15a, and a Kelvin source pin optimized for gate driving. The product currently uses the industry standard powerflat 5x6 HV compact mount package. Its typical applications are PC adapter, USB wall charger and wireless charging.

Sgt120r65a2s, which is developing a 650V Gan transistor with 120m Ω RDS (on), uses 2spak advanced lamination packaging, cancels the wire bonding process, and improves the energy efficiency and reliability of high-power and high-frequency applications. The on resistances of sgt65r65al and sgt65r65a2s are both 65m Ω RDS (on), and are packaged with powerflat 5x6 HV and 2spak respectively.

In addition, the g-fet series also introduces a new cascode Gan transistor sgt250r65alcs, which is packaged in pqfn 5x6 and has an on resistance of 250m Ω RDS (on).

G-fet transistor series is a very fast, ultra-low qrr, robust Gan cascode or d-mode FET with standard silicon gate drive, which is suitable for various power supply designs.

G-hemt transistor series is an ultra fast, zero qrr enhanced mode HEMT, which is easy to connect in parallel, and is very suitable for applications with very high frequency and power.

G-fet and g-hemt belong to the powergan series of stpower product portfolio.