Low-power SRAM memory is used in products that are powered by batteries and are very sensitive to power consumption. As a type of static random access memory, static random access memory (SRAM), as the most important semiconductor memory, is widely embedded in high-performance microcomputers. processor. With the continuous improvement of integrated circuit manufacturing process, memory occupies a larger and larger proportion of the power consumption of the chip, and the design of high-speed and low-power SRAM becomes more and more important.

ISSI IS62WV12816DBLL-55TI is a high-speed 2M-bit static RAM with a bit width of 16x128K words. It is manufactured using ISSI‘s high-performance CMOS technology. This highly reliable process, combined with innovative circuit design techniques, results in high-performance and low-power devices. Provides easy memory expansion by using chip enable and output enable inputs. An active low write enable controls memory writes and reads. Data bytes allow high and low byte access.

IS62WV12816DBLL-55TI high-speed access time is 55ns, adopts CMOS low-power operation, operating voltage is 2.5V~3.6V, fully static operation, no clock or refresh, three-state output, high byte and low byte data control, The operating temperature range is –40°C to +85°C, and it is available in a JEDEC standard 44-pin TSOP (TYPE II) package.

ISSI is a technology leader in the design, development and sale of high-performance integrated circuits primarily for the automotive, communications, digital consumer, and industrial and medical markets. The main products are high-speed low-power SRAM and low- and medium-density DRAM. Also designs and sells NOR flash memory products and high-performance analog and mixed-signal integrated circuits.

If you want to find ISSI chips, please contact ISSI agent  ShenZhen Hao Qi Core Technology Support to provide sample testing and technical support!