ST‘s 13.6MHz RF power transistor STAC250V2-500E offers market-leading stability and high power density. In a very thermally efficient miniature package, it can be used for high output power Class E industrial power supplies.

 

The load mismatch ratio of STAC250V2-500E is 20:1, which is at the highest level in the market, and the maximum safe power is as high as 600W. The 0.55x1.35-inch STAC air-chamber package reduces product size by approximately 50% compared to solutions using traditional ceramic packages. The footprint of two STAC250V2-500E transistors is smaller than one ceramic transistor, enabling small power designs above 1kW. Air-cell packaging reduces thermal resistivity by 25%, which helps improve transistor operational reliability. ST‘s 600W - 250V RF transistors use the latest high-voltage technology to enable smaller, more reliable Class E industrial power supplies.

The product advantages of the STAC250V2-500E ensure excellent performance for target applications including induction heaters, plasma enhanced vapor deposition systems and manufacturing equipment for solar cells and flat panel TVs.

STAC250V2-500E adopts STMicroelectronics latest SuperDMOS high-voltage technology, the maximum working voltage is 250V; and the breakdown voltage higher than 900V ensures the stability of other applications such as E-class inductive resonant circuit or D-class power amplifier.