According to foreign media reports, Infineon has launched a new CoolSiC™ technology to improve the on-resistance of a given chip area. A leading Silicon Carbide (SiC) chip, this CoolSiC™ MOSFET 1200V M1H is available in a range of product portfolios and will be available in the popular Easy series of modules, as well as discrete packages using .XT interconnect technology. The M1H chip is highly flexible and suitable for solar systems such as inverters that need to meet peak demand. The chip is also suitable for electric vehicle fast charging, energy storage systems and other industrial applications.

Recent advances in CoolSiC-based technology have significantly increased the gate operating window, thereby increasing the on-resistance for a given chip area. At the same time, the larger gate operating window provides a high degree of robustness against gate driver and layout related voltage peaks, even at higher switching frequencies without limitation. In addition to the M1H chip technology, the associated housings are also available in technology and package variants to achieve higher power densities and give design engineers more options to improve application performance.

The M1H will be integrated into the popular Easy series to further complement the Easy1B and 2B modules. In addition, a new product will be launched that uses the new 1200V CoolSiC MOSFET to enhance the Easy 3B module. The new chip size has been introduced to maximize flexibility to ensure the broadest industrial portfolio. Using the M1H chip can significantly improve the on-resistance of the module, making the device more reliable and efficient.

Additionally, with a maximum temporary junction temperature of 175°C, the overload capability is enhanced, enabling higher power density and fault event coverage. Compared to its predecessor, the M1, the M1H implements a smaller internal RG for easy optimization of switching behavior. The M1H chip maintains this dynamic behavior.

In addition to the Easy module family, the CoolSiC MOSFET 1200 V M1H portfolio is also available in the TO247-3 and TO247-4 discrete packages with new ultra-low on-resistances of 7 mΩ, 14 mΩ and 20 mΩ. These new devices are easy to design, especially due to gate voltage overshoot and undershoot, new maximum gate-source voltage down to -10 V, and avalanche and short-circuit capability.

The .XT interconnect technology previously introduced in the D2PAK-7L package is now also available in the TO-package. Compared with standard interconnects, thermal capacity has been improved by more than 30%. Benefiting from this thermal benefit, the output power can be increased by up to 15%. In addition, this can help increase switching frequency to further reduce passive components in applications such as electric vehicle charging, energy storage or photovoltaic systems, increase power density, and reduce system cost. Without changing system operating conditions, .XT technology will reduce the junction temperature of SiC MOSFETs, thereby significantly improving system lifetime and power cycling capability.