Texas Instruments‘ gallium nitride IC LMG3410R070 power stage features integrated drivers and protection, allowing designers to achieve higher levels of power density and efficiency in power electronics systems. The inherent advantages of the LMG341x over silicon MOSFETs include ultra-low input and output capacitance values, zero reverse recovery that reduces switching losses by 80%, and low switch node ringing that reduces EMI. These advantages enable dense and efficient topologies such as totem-pole PFC.

The LMG3410R070 provides an alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify designs, maximize reliability and optimize the performance of any power supply. Integrated gate driver supports 100V/ns switching (nearly zero Vds ringing), sub-100ns current limit protects itself against accidental shoot-through events, thermal shutdown prevents thermal runaway, and system interface signals provide self-monitoring .

Features of Texas Instruments‘ Gallium Nitride IC LMG3410R070:

1. The TI GaN process has passed the accelerated reliability test of the actual application hard switching task profile

2. Support high-density power conversion design

(1) Superior system performance compared to cascode or stand-alone GaN FETs

(2) Low inductance 8mm x 8mm QFN package simplifies design and layout

(3) Adjustable drive strength ensures switching performance and EMI control

(4) Digital fault status output signal

(5) Only +12V unregulated power supply is required

3. Integrated gate driver

(1) Zero common source inductance

(2) 20ns propagation delay ensures MHz-level operating frequency

(3) Process-adjusted gate bias voltage ensures reliability

(4) User adjustable slew rate from 25 to 100V/ns

4. Strong protection

(1) No need for external protection components

(2) Overcurrent protection, the response time is less than 100ns

(3) The slew rate immunity is higher than 150V/ns

(4) Transient overvoltage immunity

(5) Overheating protection

(6) UVLO protection for all power rails

ShenZhen Hao Qi Core Technology is supplying the LMG3410R070, a 600V 70mΩ gallium nitride IC with integrated driver and protection functions.